Filters
Filters
Afzonderlijke Halfgeleiderproducten
| Beeld | deel # | Beschrijving | fabrikant | Voorraad | RFQ | |
|---|---|---|---|---|---|---|
|
2N7002BK,215 |
MOSFET N-CH 60V 350MA TO236AB
|
Nexperia USA Inc.
|
|
|
|
|
|
RE1C002UNTCL |
MOSFET N-CH 20V 200MA EMT3F
|
Rohm halfgeleider
|
|
|
|
|
|
SCT3030KLGC11 |
SICFET N-CH 1200V 72A TO247N
|
Rohm halfgeleider
|
|
|
|
|
|
IRFR7440TRPBF |
MOSFET N-CH 40V 90A DPAK
|
Infineon-technologieën
|
|
|
|
|
|
SUD19P06-60-GE3 |
MOSFET P-CH 60V 18.3A TO252
|
Vishay Siliconix
|
|
|
|
|
|
SIR426DP-T1-GE3 |
MOSFET N-CH 40V 30A PPAK SO-8
|
Vishay Siliconix
|
|
|
|
|
|
NDT452AP |
MOSFET P-CH 30V 5A SOT-223-4
|
ONSEMI
|
|
|
|
|
|
SIS434DN-T1-GE3 |
MOSFET N-CH 40V 35A PPAK 1212-8
|
Vishay Siliconix
|
|
|
|
|
|
SI7655ADN-T1-GE3 |
MOSFET P-CH 20V 40A PPAK1212-8S
|
Vishay Siliconix
|
|
|
|
|
|
SI4425DDY-T1-GE3 |
MOSFET P-CH 30V 19.7A 8SO
|
Vishay Siliconix
|
|
|
|
|
|
SI7149ADP-T1-GE3 |
MOSFET P-CH 30V 50A PPAK SO-8
|
Vishay Siliconix
|
|
|
|
|
|
SI2343DS-T1-E3 |
MOSFET P-CH 30V 3.1A SOT23-3
|
Vishay Siliconix
|
|
|
|
|
|
DMP6350S-7 |
MOSFET P-CH 60V 1.5A SOT23
|
Dioden geïntegreerd
|
|
|
|
|
|
DMP3056LDM-7 |
MOSFET P-CH 30V 4.3A SOT-26
|
Dioden geïntegreerd
|
|
|
|
|
|
NVR5198NLT1G |
MOSFET N-CH 60V 1.7A SOT23-3
|
ONSEMI
|
|
|
|
|
|
SI2301BDS-T1-E3 |
MOSFET P-CH 20V 2.2A SOT23-3
|
Vishay Siliconix
|
|
|
|
|
|
SI1308EDL-T1-GE3 |
MOSFET N-CH 30V 1.4A SOT323
|
Vishay Siliconix
|
|
|
|
|
|
SI2304DDS-T1-GE3 |
MOSFET N-CH 30V 3.3A/3.6A SOT23
|
Vishay Siliconix
|
|
|
|
|
|
NTR4101PT1G |
MOSFET p-CH 20V 1.8A sot23-3
|
ONSEMI
|
|
|
|
|
|
Ruimte van het voertuig |
MOSFET N-CH 50V 200MA UMT3F
|
Rohm halfgeleider
|
|
|
|
|
|
2N7002-7-F |
MOSFET N-CH 60V 115MA SOT23-3
|
Dioden geïntegreerd
|
|
|
|
|
|
JANTX1N6622US |
DIODE GEN PURP 660V 2A D-5A
|
Microchiptechnologie
|
|
|
|
|
|
JANTX1N5623US |
DIODE GEN PURP 1KV 1A D-5A
|
Microchiptechnologie
|
|
|
|
|
|
JANTX1N5420 |
DIODE GEN PURP 600V 3A B AXIAL
|
Microchiptechnologie
|
|
|
|
|
|
JANTX1N5615US |
DIODE GEN PURP 200V 1A A SQ-MELF
|
Microchiptechnologie
|
|
|
|
|
|
JANTX1N5417 |
Diode GEN PURP 200V 3A AXIAAL
|
Microchiptechnologie
|
|
|
|
|
|
JANTX1N6642US |
DIODE GEN PURP 75V 300MA D-5D
|
Microchiptechnologie
|
|
|
|
|
|
VS-60EPF04-M3 |
DIODE GP 400V 60A TO247AC
|
Vishay General Semiconductor - Dioden divisie
|
|
|
|
|
|
RURG8060 |
DIODE GEN PURP 600V 80A TO247-2
|
ONSEMI
|
|
|
|
|
|
RURG80100 |
DIODE GEN PURP 1KV 80A TO247-2
|
ONSEMI
|
|
|
|
|
|
RHRG5060 |
DIODE GEN PURP 600V 50A TO247-2
|
ONSEMI
|
|
|
|
|
|
MBRB40250TG |
DIODE SCHOTTKY 250V 40A D2PAK
|
ONSEMI
|
|
|
|
|
|
RHRP3060 |
DIODE GEN PURP 600V 30A TO220-2L
|
ONSEMI
|
|
|
|
|
|
RHRP30120 |
Diode GP 1.2KV 30A TO220-2L
|
ONSEMI
|
|
|
|
|
|
LXA15T600 |
DIODE GEN PURP 600V 15A tot 220AC
|
Krachtintegratie
|
|
|
|
|
|
RHRP8120 |
DIODE GEN PURP 1.2KV 8A TO220-2L
|
ONSEMI
|
|
|
|
|
|
BZD27C24P |
SUB SMA, 1000MW, 6%, ZENER DIODE
|
De Halfgeleiderbedrijf van Taiwan
|
|
|
|
|
|
CA3046 |
CA3046 - GENERAL PURPOSE NPN TRA
|
Rochester Electronics, LLC
|
|
|
|
|
|
BAS716 |
DIODE, LOW LEAKAGE, 200MA, 75V,
|
Good-Ark halfgeleider
|
|
|
|
|
|
DE150-501N04A |
RF MOSFET N-CHANNEL DE150
|
IXYS-RF
|
|
|
|
|
|
DE475-102N21A |
RF MOSFET N-CHANNEL DE475
|
IXYS-RF
|
|
|
|
|
|
DE375-102N12A |
RF MOSFET N-CHANNEL DE375
|
IXYS-RF
|
|
|
|
|
|
DE275-102N06A |
RF MOSFET N-CHANNEL DE275
|
IXYS-RF
|
|
|
|
|
|
IXTA4N150HV |
MOSFET N-CH 1500V 4A TO263
|
IXYS
|
|
|
|
|
|
IXFH6N120P |
MOSFET N-CH 1200V 6A tot 247AD
|
IXYS
|
|
|
|
|
|
IXFN420N10T |
MOSFET N-CH 100V 420A SOT227B
|
IXYS
|
|
|
|
|
|
IXFH50N85X |
MOSFET N-CH 850V 50A TO247
|
IXYS
|
|
|
|
|
|
IXTQ22N50P |
MOSFET N-CH 500V 22A TO3P
|
IXYS
|
|
|
|
|
|
IXTQ76N25T |
MOSFET N-CH 250V 76A TO3P
|
IXYS
|
|
|
|
|
|
IXFN82N60P |
MOSFET N-CH 600V 72A SOT-227B
|
IXYS
|
|
|