Bericht versturen

SI7655ADN-T1-GE3

fabrikant:
Vishay Siliconix
Beschrijving:
MOSFET P-CH 20V 40A PPAK1212-8S
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-50°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs:
225 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3.6mOhm @ 20A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6600 pF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8S
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
(Maximum) machtsdissipatie:
4.8W (Ta), 57W (Tc)
Technology:
MOSFET (Metal Oxide)
Basisproductnummer:
SI7655
Inleiding
P-kanaal 20 V 40 A (Tc) 4,8 W (Ta), 57 W (Tc) Oppervlakte PowerPAK® 1212-8S
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