SQSA12CENW-T1_GE3
fabrikant:
Vishay Siliconix
Beschrijving:
De in punt 6.2.4.2 bedoelde vergunning wordt niet verleend voor de toepassing van de voorschriften v
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
47 nC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 25 V
Series:
Automotive, AEC-Q101, TrenchFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
PowerPAK® 1212-8W
Rds On (Max) @ Id, Vgs:
22mOhm @ 7A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
62.5W (Tc)
Package / Case:
PowerPAK® 1212-8W
Drain naar bronspanning (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Technologie:
MOSFET (Metaaloxide)
FET Feature:
-
Inleiding
N-kanaal 100 V 18A (Tc) 62,5 W (Tc) Oppervlakte PowerPAK® 1212-8W
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| Beeld | deel # | Beschrijving | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
Verzend RFQ
Voorraad:
MOQ: