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IXFN82N60P

fabrikant:
IXYS
Beschrijving:
MOSFET N-CH 600V 72A SOT-227B
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs:
240 nC @ 10 V
Rds On (Max) @ Id, Vgs:
75mOhm @ 41A, 10V
FET Type:
N-Channel
Inrichtingsspanning (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain naar bronspanning (Vdss):
600 V
Vgs (Max):
±30V
Productstatus:
Actief
Input Capacitance (Ciss) (Max) @ Vds:
23000 pF @ 25 V
Montage-type:
Chassismontage
Series:
HiPerFET™, Polar
Supplier Device Package:
SOT-227B
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
72A (Tc)
Power Dissipation (Max):
1040W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN82
Inleiding
N-kanaal 600 V 72A (Tc) 1040W (Tc) Chassis Mount SOT-227B
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