IXFK120N20
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Eigenschap:
-
Vgs(th) (Max) @ Id:
4V @ 8mA
Werktemperatuur:
-55 °C ~ 150 °C (TJ)
Package / Case:
TO-264-3, TO-264AA
Doorgangsplicht (Qg) (Max) @ Vgs:
nC 300 @ 10 V
Rds On (Max) @ Id, Vgs:
17mOhm @ 60A, 10V
FET-type:
N-kanaal
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9100 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™
Supplier Device Package:
TO-264AA (IXFK)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
560W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFK120
Inleiding
N-kanaal 200 V 120A (Tc) 560W (Tc) door gat TO-264AA (IXFK)
Verwante producten

IXFK27N80
MOSFET N-CH 800V 27A TO264AA

IXFH20N80Q
MOSFET N-CH 800V 20A TO247AD

IXFH15N80
MOSFET N-CH 800V 15A TO247AD

IXFH26N50Q
MOSFET N-CH 500V 26A TO247AD

IXFH12N90
MOSFET N-CH 900V 12A TO247AD

IXFH13N50
MOSFET N-CH 500V 13A TO247AD

IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B

IXFN32N100Q3
MOSFET N-CH 1000V 28A SOT227B

IXFN36N100
MOSFET N-CH 1KV 36A SOT-227B

IXFN38N100Q2
MOSFET N-CH 1000V 38A SOT-227
Beeld | deel # | Beschrijving | |
---|---|---|---|
![]() |
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
![]() |
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
![]() |
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
![]() |
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
![]() |
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
![]() |
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
![]() |
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
![]() |
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
![]() |
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
|
![]() |
IXFN38N100Q2 |
MOSFET N-CH 1000V 38A SOT-227
|
Verzend RFQ
Voorraad:
MOQ: