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SCT3030KLGC11

fabrikant:
Rohm halfgeleider
Beschrijving:
SICFET N-CH 1200V 72A TO247N
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.6V @ 13.3mA
Werktemperatuur:
175°C (TJ)
Package / Case:
TO-247-3
Doorgangsplicht (Qg) (Max) @ Vgs:
131 nC @ 18 V
Rds On (Max) @ Id, Vgs:
39mOhm @ 27A, 18V
FET-type:
N-kanaal
Drive Voltage (Max Rds On, Min Rds On):
18V
Pakket:
Buis
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2222 pF @ 800 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247N
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
72A (Tc)
Power Dissipation (Max):
339W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT3030
Inleiding
N-kanaal 1200 V 72A (Tc) 339W (Tc) door gat TO-247N
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