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IXFN110N85X

fabrikant:
IXYS
Beschrijving:
MOSFET N-CH 850V 110A SOT227B
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Eigenschap:
-
Vgs(th) (Max) @ Id:
5.5V @ 8mA
Werktemperatuur:
-55 °C ~ 150 °C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Doorgangsplicht (Qg) (Max) @ Vgs:
425 nC @ 10 V
Rds On (Max) @ Id, Vgs:
33mOhm @ 55A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
850 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
17000 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Ultra X
Supplier Device Package:
SOT-227B
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Power Dissipation (Max):
1170W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN110
Inleiding
N-kanaal 850 V 110A (Tc) 1170W (Tc) Chassis Mount SOT-227B
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