IXFX66N85X
fabrikant:
IXYS
Beschrijving:
MOSFET N-CH 850V 66A PLUS247-3
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
230 nC @ 10 V
Rds On (Max) @ Id, Vgs:
65mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
850 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8900 pF @ 25 V
Mounting Type:
Through Hole
Reeks:
HiPerFETTM, Ultra X
Supplier Device Package:
PLUS247™-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
66A (Tc)
(Maximum) machtsdissipatie:
1250 W (Tc)
Technology:
MOSFET (Metal Oxide)
Basisproductnummer:
IXFX66
Inleiding
N-kanaal 850 V 66A (Tc) 1250W (Tc) door gat PLUS247TM-3
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| Beeld | deel # | Beschrijving | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
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|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
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|
IXFH20N80Q |
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|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
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|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
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|
|
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IXFN36N100 |
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|
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