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IXTH80N65X2

fabrikant:
IXYS
Beschrijving:
MOSFET N-CH 650V 80A TO247
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Eigenschap:
-
Vgs(th) (Max) @ Id:
4.5V @ 4mA
Werktemperatuur:
-55 °C ~ 150 °C (TJ)
Package / Case:
TO-247-3
Doorgangsplicht (Qg) (Max) @ Vgs:
144 nC @ 10 V
Rds On (Max) @ Id, Vgs:
40mOhm @ 40A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7753 pF @ 25 V
Mounting Type:
Through Hole
Series:
Ultra X2
Supplier Device Package:
TO-247 (IXTH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Power Dissipation (Max):
890W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTH80
Inleiding
N-kanaal 650 V 80 A (Tc) 890 W (Tc) door gat TO-247 (IXTH)
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