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IXFA4N100Q

fabrikant:
IXYS
Beschrijving:
MOSFET N-CH 1000V 4A TO263
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 1.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3 Ohm @ 2A, 10V
FET Type:
N-Channel
Inrichtingsspanning (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain naar bronspanning (Vdss):
1000 V
Vgs (Max):
±20V
Productstatus:
Actief
Input Capacitance (Ciss) (Max) @ Vds:
1050 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Q Class
Supplier Device Package:
TO-263AA (IXFA)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFA4N100
Inleiding
N-kanaal 1000 V 4A (Tc) 150W (Tc) Oppervlakte TO-263AA (IXFA)
Verzend RFQ
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