IRF9510PBF
fabrikant:
Vishay Siliconix
Beschrijving:
MOSFET P-CH 100V 4A TO220AB
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Doorgangsplicht (Qg) (Max) @ Vgs:
8.7 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2.4A, 10V
FET-type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Pakket:
Buis
Drain to Source Voltage (Vdss):
100 V
Vgs (max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
200 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Power Dissipation (Max):
43W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF9510
Inleiding
P-kanaal 100 V 4A (Tc) 43W (Tc) door gat TO-220AB
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| Beeld | deel # | Beschrijving | |
|---|---|---|---|
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|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
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|
SIR872ADP-T1-RE3 |
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SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
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|
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|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
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|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
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|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
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|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
Verzend RFQ
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