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SIRA18DP-T1-GE3

fabrikant:
Vishay Siliconix
Beschrijving:
MOSFET N-CH 30V 33A PPAK SO-8
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Pakket / doos:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
21.5 nC @ 10 V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 10A, 10V
FET Type:
N-Channel
Inrichtingsspanning (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain naar bronspanning (Vdss):
30 V
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1000 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Power Dissipation (Max):
3.3W (Ta), 14.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIRA18
Inleiding
N-kanaal 30 V 33A (Tc) 3,3 W (Ta), 14,7 W (Tc) Oppervlakte PowerPAK® SO-8
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