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SI4840BDY-T1-E3

fabrikant:
Vishay Siliconix
Beschrijving:
MOSFET N-CH 40V 19A 8SO
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
Rds On (Max) @ Id, Vgs:
9mOhm @ 12.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 20 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Power Dissipation (Max):
2.5W (Ta), 6W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4840
Inleiding
N-kanaal 40 V 19A (Tc) 2,5 W (Ta), 6 W (Tc) Oppervlakte-montage 8-SOIC
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