Bericht versturen

SI2325DS-T1-GE3

fabrikant:
Vishay Siliconix
Beschrijving:
MOSFET P-CH 150V 530MA SOT23-3
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 500mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
510 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
530mA (Ta)
(Maximum) machtsdissipatie:
750 mW (Ta)
Technology:
MOSFET (Metal Oxide)
Basisproductnummer:
SI2325
Inleiding
P-kanaal 150 V 530 mA (Ta) 750 mW (Ta) Oppervlakte SOT-23-3 (TO-236)
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Voorraad:
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