Bericht versturen

IXTT120N15P

fabrikant:
IXYS
Beschrijving:
MOSFET N-CH 150V 120A TO268
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Pakket / doos:
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 10 V
Rds On (Max) @ Id, Vgs:
16mOhm @ 500mA, 10V
FET Type:
N-Channel
Inrichtingsspanning (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain naar bronspanning (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4900 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Polar
Supplier Device Package:
TO-268AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
600W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTT120
Inleiding
N-kanaal 150 V 120 A (Tc) 600 W (Tc) Oppervlakte-montage TO-268AA
Verzend RFQ
Voorraad:
MOQ: