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IRFD120PBF

fabrikant:
Vishay Siliconix
Beschrijving:
MOSFET N-CH 100V 1.3A 4DIP
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
4-DIP (0.300", 7.62mm)
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
Rds On (Max) @ Id, Vgs:
270mOhm @ 780mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
360 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
4-HVMDIP
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
1.3A (Ta)
Power Dissipation (Max):
1.3W (Ta)
Technologie:
MOSFET (Metaaloxide)
Base Product Number:
IRFD120
Inleiding
N-kanaal 100 V 1.3A (Ta) 1.3W (Ta) door gat 4-HVMDIP
Verzend RFQ
Voorraad:
MOQ: