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IRF610PBF

fabrikant:
Vishay Siliconix
Beschrijving:
MOSFET N-CH 200V 3.3A TO220AB
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Vishay Siliconix
Stroom - continue afvoer (Id) @ 25°C:
3.3A (Tc)
(Maximum) machtsdissipatie:
36W (Tc)
Technology:
MOSFET (Metal Oxide)
Basisproductnummer:
IRF610
Inleiding
N-kanaal 200 V 3.3A (Tc) 36W (Tc) door gat TO-220AB
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