Bericht versturen

IRFD110PBF

fabrikant:
Vishay Siliconix
Beschrijving:
MOSFET N-CH 100V 1A 4DIP
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Werktemperatuur:
-55°C ~ 175°C (TJ)
Package / Case:
4-DIP (0.300", 7.62mm)
Doorgangsplicht (Qg) (Max) @ Vgs:
8.3 nC @ 10 V
Rds On (Max) @ Id, Vgs:
540mOhm @ 600mA, 10V
FET-type:
N-kanaal
Drive Voltage (Max Rds On, Min Rds On):
10V
Pakket:
Buis
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
180 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
4-HVMDIP
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Power Dissipation (Max):
1.3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFD110
Inleiding
N-kanaal 100 V 1A (Ta) 1,3 W (Ta) door gat 4-HVMDIP
Verzend RFQ
Voorraad:
MOQ: