IXTA26P20P-TRL
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Eigenschap:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Werktemperatuur:
-55 °C ~ 150 °C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
Rds On (Max) @ Id, Vgs:
170mOhm @ 13A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2740 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Polar
Supplier Device Package:
TO-263 (D2Pak)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTA26
Inleiding
P-kanaal 200 V 26A (Tc) 300W (Tc) Oppervlakte TO-263 (D2Pak)
Verwante producten

IXFK120N20
MOSFET N-CH 200V 120A TO-264AA

IXFK27N80
MOSFET N-CH 800V 27A TO264AA

IXFH20N80Q
MOSFET N-CH 800V 20A TO247AD

IXFH15N80
MOSFET N-CH 800V 15A TO247AD

IXFH26N50Q
MOSFET N-CH 500V 26A TO247AD

IXFH12N90
MOSFET N-CH 900V 12A TO247AD

IXFH13N50
MOSFET N-CH 500V 13A TO247AD

IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B

IXFN32N100Q3
MOSFET N-CH 1000V 28A SOT227B

IXFN36N100
MOSFET N-CH 1KV 36A SOT-227B
Beeld | deel # | Beschrijving | |
---|---|---|---|
![]() |
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
![]() |
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
![]() |
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
![]() |
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
![]() |
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
![]() |
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
![]() |
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
![]() |
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
![]() |
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
![]() |
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
Verzend RFQ
Voorraad:
MOQ: