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SI9407BDY-T1-GE3

fabrikant:
Vishay Siliconix
Beschrijving:
MOSFET P-CH 60V 4.7A 8SO
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Rds On (Max) @ Id, Vgs:
120mOhm @ 3.2A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 30 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Verpakking van de leverancier:
8-SOIC
Mfr:
Vishay Siliconix
Stroom - continue afvoer (Id) @ 25°C:
4.7A (Tc)
Power Dissipation (Max):
2.4W (Ta), 5W (Tc)
Technologie:
MOSFET (Metaaloxide)
Base Product Number:
SI9407
Inleiding
P-kanaal 60 V 4.7A (Tc) 2.4W (Ta), 5W (Tc) Oppervlakte-montage 8-SOIC
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