Bericht versturen

SQ2337ES-T1_BE3

fabrikant:
Vishay Siliconix
Beschrijving:
MOSFET P-CH 80V 2.2A SOT23-3
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Rds On (Max) @ Id, Vgs:
290mOhm @ 1.2A, 10V
FET Type:
P-Channel
Inrichtingsspanning (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain naar bronspanning (Vdss):
80 V
Vgs (Max):
±20V
Productstatus:
Actief
Input Capacitance (Ciss) (Max) @ Vds:
620 pF @ 40 V
Montage-type:
Oppervlakte
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
2.2A (Tc)
Power Dissipation (Max):
3W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQ2337
Inleiding
P-kanaal 80 V 2.2A (Tc) 3W (Tc) Oppervlaktebevestiging SOT-23-3 (TO-236)
Verzend RFQ
Voorraad:
MOQ: