Bericht versturen

IXTA76P10T

fabrikant:
IXYS
Beschrijving:
MOSFET P-CH 100V 76A TO263
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
197 nC @ 10 V
Rds On (Max) @ Id, Vgs:
25mOhm @ 38A, 10V
FET Type:
P-Channel
Inrichtingsspanning (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain naar bronspanning (Vdss):
100 V
Vgs (Max):
±15V
Productstatus:
Actief
Input Capacitance (Ciss) (Max) @ Vds:
13700 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchP™
Supplier Device Package:
TO-263AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
76A (Tc)
Power Dissipation (Max):
298W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTA76
Inleiding
P-kanaal 100 V 76A (Tc) 298W (Tc) Oppervlakte TO-263AA
Verzend RFQ
Voorraad:
MOQ: