Filters
Filters
Geheugen-IC's
| Beeld | deel # | Beschrijving | fabrikant | Voorraad | RFQ | |
|---|---|---|---|---|---|---|
|
W25Q128BVEIG |
IC FLASH 128M SPI 104MHZ 8WSON
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Winbond Electronics
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W29GL064CB7S |
IC FLASH 64M PARALLEL 48TSOP
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Winbond Electronics
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W972GG6JB-3 |
IC DRAM 2G PARALLEL 84WBGA
|
Winbond Electronics
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W25Q128FVFIG |
IC FLASH 128M SPI 104MHZ 16SOIC
|
Winbond Electronics
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JS28F128J3F75A |
IC FLASH 128M PARALLEL 56TSOP
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Microntechnologie
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N25Q512A13G1240E |
IC FLASH 512M SPI 24TPBGA
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Microntechnologie
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N25Q128A13EF840E |
IC FLASH 128M SPI 108MHZ 8VDFPN
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Microntechnologie
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N25Q256A13ESF40G |
IC FLASH 256M SPI 108MHZ 16SOP2
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Microntechnologie
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MT41J128M16JT-125: K |
IC DRAM 2G PARALLEL 96FBGA
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Microntechnologie
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W9412G6JH-4 |
IC DRAM 128M PARALLEL 66TSOP II
|
Winbond Electronics
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MT4vrijwilligersdienst |
IC FLASH 512M PARALLEL 64LBGA
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Microntechnologie
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MT25QL512ABB8E12-0SIT |
IC FLASH 512M SPI 24TPBGA
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Microntechnologie
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Mt29f1g08abbeah4-ITX: E |
IC FLASH 1G PARALLEL 63VFBGA
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Microntechnologie
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N25Q032A11ESE40G |
IC FLASH 32M SPI 108MHZ 8SO
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Microntechnologie
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Mt29f4g08abaeawp-HET: E |
IC FLASH 4G PARALLEL 48TSOP
|
Microntechnologie
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W25Q256FVEJF |
IC Flash geheugen 256MB
|
Winbond Electronics
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MT41J128M16JT-107G:K |
IC DRAM 2G PARALLEL 96FBGA
|
Microntechnologie
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MT41J256M16HA-125: E |
IC DRAM 4G PARALLEL 96FBGA
|
Microntechnologie
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MT41K128M16JT-125: K |
IC DRAM 2G PARALLEL 96FBGA
|
Microntechnologie
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BT1B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2 |
IC DRAM 8G PARALLEL 96FBGA
|
Microntechnologie
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MT41K512M8RH-125:E |
IC DRAM 4G PARALLEL 78FBGA
|
Microntechnologie
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K4B2G1646F-BCK0 |
96FBGA met loodvrij en halogeenvrij
|
Samsung halfgeleider
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K4h511638j-LCCC |
512 Mb C-die DDR SDRAM Specificatie
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Samsung halfgeleider
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K9F1G08U0E-SCB0 |
1 GB E-die NAND Flash
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Samsung halfgeleider
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K4W1G1646E-HC12 |
Grafisch Geheugen
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Samsung halfgeleider
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K4T1G084QF-BCF7 |
1 GB F-die DDR2 SDRAM
|
Samsung halfgeleider
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K4b4g1646d-BCMA |
4Gb-B-Matrijs DDR3 SDRAM Olny x16
|
Samsung halfgeleider
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MT48LC16M16A2P-6A: G |
IC DRAM 256M PARALLEL 54TSOP
|
Microntechnologie
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MT48LC8M16A2B4-6A: L |
IC DRAM 128M PARALLEL 54VFBGA
|
Microntechnologie
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MT48LC8M16A2P-6A: L |
IC DRAM 128M PARALLEL 54TSOP
|
Microntechnologie
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MT41K256M16HA-125IT: E |
IC DRAM 4G PARALLEL 96FBGA
|
Microntechnologie
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MTFC4GLGDQ-AIT |
IC FLASH 32G MMC 100LBGA
|
Microntechnologie
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MT4F16G08ABACAWP-ITZ: |
IC FLASH 16G PARALLEL 48TSOP
|
Microntechnologie
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MT29F1G08ABAEAWP: E |
IC FLASH 1G PARALLEL 48TSOP
|
Microntechnologie
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JS28F256M29EWH |
IC FLASH 256M PARALLEL 56TSOP
|
Microntechnologie
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MT2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2 |
IC FLASH 4G PARALLEL 63VFBGA
|
Microntechnologie
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Mt29f8g08abacawp-HET: C |
IC FLASH 8G PARALLEL 48TSOP I
|
Microntechnologie
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M29W128GH7AN6E |
IC FLASH 128M PARALLEL 56TSOP
|
Microntechnologie
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MT41J128M16JT-093: K |
IC DRAM 2G PARALLEL 96FBGA
|
Microntechnologie
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MT4117M2M2M2M2M2 |
IC DRAM 4G PARALLEL 96FBGA
|
Microntechnologie
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N25Q032A13EF440E |
IC FLASH 32M SPI 108MHZ 8PDFN
|
Microntechnologie
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N25Q128A13EF740E |
IC FLASH 128M SPI 108MHZ 8VDFPN
|
Microntechnologie
|
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PC28F320J3F75A |
IC FLASH 32M PARALLEL 64EASYBGA
|
Microntechnologie
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MT48LC2M32B2P-6A: J |
IC DRAM 64M PARALLEL 86TSOP II
|
Microntechnologie
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MT48LC32M8A2P-6A:G |
IC DRAM 256M PARALLEL 54TSOP
|
Microntechnologie
|
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MT48LC4M16A2P-6A: J |
IC DRAM 64M PARALLEL 54TSOP
|
Microntechnologie
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W29N01GVSIAA |
IC FLASH 1G PARALLEL 48TSOP
|
Winbond Electronics
|
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W25Q16CLSSIG |
IC FLASH 16M SPI 50MHZ 8SOIC
|
Winbond Electronics
|
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W25Q32FVSSIQ |
IC FLASH 32M SPI 104MHZ 8SOIC
|
Winbond Electronics
|
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W25Q128FVPIQ |
IC FLASH 128M SPI 104MHZ 8WSON
|
Winbond Electronics
|
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