Filters
Filters
Geheugen
| Beeld | deel # | Beschrijving | fabrikant | Voorraad | RFQ | |
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MT4A1G16WBU-083E:B |
IC DRAM 16G PARALLEL 1,2 GHz
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Microntechnologie
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MT4A1G8WE-075E:B |
IC DRAM 8G PARALLEL 1,33 GHz
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Microntechnologie
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MT40A512M16JY-075E:B |
IC DRAM 8G PARALLEL 1,33 GHz
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Microntechnologie
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MT25QU256ABA1EW7-0SIT |
IC FLASH 256M SPI 133MHZ 8WPDFN
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Microntechnologie
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MT35XU512ABA1G12-0AAT |
SERIE NOR SLC 64MX8 TBGA
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Microntechnologie
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S29GL032N90FFIS42 |
Flashgeheugen noch
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Cypress halfgeleider
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MTA36ASF4G72PZ-2G9E2 |
IC DRAM 288G PARALLEL 1467MHZ
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Microntechnologie
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TC58NVG2S3ETA00 |
Flashgeheugen 4Gb 3.3V SLC NAND Flash Serial EEPROM
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Toshiba
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MTFC16GAPALBH-AAT |
IC FLASH 128G MMC
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Microntechnologie
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THGBMDG5D1LBAIL |
Flashgeheugen 4GB NAND EEPROM
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Toshiba
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THGBMHG8C2LBAIL |
Flashgeheugen 32 GB NAND EEPROM w/CQ
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Toshiba
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BT1B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2 |
IC FLASH 512M SPI 24TPBGA
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Microntechnologie
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TC58NVG1S3ETAI0 |
Flashgeheugen 1 GB 3.3 V SLC NAND Flash Serial EEPROM
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Toshiba
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Mtfc32gapalbh-AIT |
IC FLASH 256G MMC
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Microntechnologie
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MTFC64GAJAECE-AAT |
IC FLASH 512G MMC
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Microntechnologie
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Mtfc64gapalbh-AIT |
IC FLASH 512G MMC
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Microntechnologie
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MT25QU02GCBB8E12-0SIT |
IC FLASH 2G SPI 133MHZ 24TPBGA
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Microntechnologie
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IS25LQ040B-JNLE-TR |
Het flashgeheugen 4Mb QSPI, speld 8 SOPT 150Mil, RoHS, ET, T&R
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ISSI
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N25Q032A13ESE40F |
IC FLASH 32M SPI 108MHZ 8SOP2
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Microntechnologie
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S34ML02G104TFI010 |
Flash geheugen 2G 3V 25ns NAND Flash
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Cypress halfgeleider
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MT25TL01GBBB8ESF-0AAT |
IC FLASH 1G SPI 133MHZ 16SOP2
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Microntechnologie
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S34ML01G100TFI000 |
Flashgeheugen 1Gb 3V 25ns NAND Flash
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Spansie / Cipres
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S34ML04G200TFI000 |
Flashgeheugen 4G, 3V, 25ns NAND Flash
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Cypress halfgeleider
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IS25LQ040B-JBLE-TR |
Het flashgeheugen 4Mb QSPI, speld 8 SOPT 208Mil, RoHS, ET, T&R
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ISSI
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S25FL164K0XMFI013 |
Flashgeheugen 64M, 3.0V, 108Mhz-Serie NOCH Flits
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Cypress halfgeleider
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IS25LQ512B-JNLE |
Flash geheugen 512Kb QSPI, 8-pin SOP 150Mil, RoHS, ET
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ISSI
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Is25lq040b-JNLE |
Flash-geheugen 4 MB QSPI, 8-pins SOP 150 Mil, RoHS, ET
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ISSI
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W25Q32BVSSJG |
IC Flash geheugen 32 MB
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Winbond Electronics
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MT25QL128ABB8E12-0AUT |
IC FLASH 128M SPI 24TPBGA
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Microntechnologie
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S29PL032J70BFI120 |
Flashgeheugen32mb 3V 70ns Parallel NOCH Flits
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Cypress halfgeleider
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S34ML01G100BHI000 |
Flashgeheugen 1Gb 3V 25ns NAND Flash
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Cypress halfgeleider
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K9F5608U0D-PCB |
32M x 8 Bit NAND Flash geheugen
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Samsung halfgeleider
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K4A8G085WB-BCPB |
8 GB B-die DDR4 SDRAM
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Samsung halfgeleider
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K4a8g165wc-BCTD |
8 GB B-die DDR4 SDRAM x16
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Samsung halfgeleider
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K4B4G0846Q-HYK0 |
DDP 4Gb B-die DDR3 SDRAM-specificatie
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Samsung halfgeleider
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K4T1G164QE-HCE7 |
1 GB E-die DDR2 SDRAM 60FBGA/84FBGA met loodvrij en halogeenvrij (RoHS-compatibel)
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Samsung halfgeleider
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S25FL127SABBHIC00 |
Flashgeheugen 128MB 3V 108MHz Serial NOR Flash
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Spansie / Cipres
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K9GAG08U0E-SCB0 |
16 GB E-die NAND Flash
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Samsung halfgeleider
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K4G20325FD-FC03 |
Grafisch Geheugen
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Samsung halfgeleider
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K4G41325FE-HC28 |
Grafisch Geheugen
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Samsung halfgeleider
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K4E6E304EE-EGCF |
Geheugen IC
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Samsung halfgeleider
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S29WS512P0SBFW000 |
Flashgeheugen512mb 1.8V 80Mhz Parallel NOCH Flits
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Spansie / Cipres
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S29WS256P0PBFW000 |
Flash-geheugen 256 MB 1,8 V 66 MHz parallelle NOR-flitser
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Spansie / Cipres
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S29GL032N90TFI030 |
Flash geheugen 3V 32 Mb Float Gate twee adres 90s
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Cypress halfgeleider
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S29GL064N90TFI010 |
Flashgeheugen64mb 3V 90ns Parallel NOCH Flits
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Cypress halfgeleider
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IS42S16320B-6TL |
DRAM 512M (32Mx16) 166MHz SDR SDRAM, 3.3V
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ISSI
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MT25QL01GBBB8E12-0SIT |
IC FLASH 1G SPI 133MHZ 24TPBGA
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Microntechnologie
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Mt25ql128aba1ese-MSIT |
IC FLASH 128M SPI 133MHZ 8SOP2
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Microntechnologie
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IS43TR16128AL-125KBL |
DRAM 2G 1,35V (128M x 16) DDR3 SDRAM
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ISSI
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K4B1G1646G-BCH9 |
1 GB D-die DDR3 SDRAM-specificatie
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Samsung halfgeleider
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