Filters
Filters
Halfgeleiders
| Beeld | deel # | Beschrijving | fabrikant | Voorraad | RFQ | |
|---|---|---|---|---|---|---|
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K4E6E304EE-EGCF |
Geheugen IC
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Samsung halfgeleider
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S29WS512P0SBFW000 |
Flashgeheugen512mb 1.8V 80Mhz Parallel NOCH Flits
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Spansie / Cipres
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S29WS256P0PBFW000 |
Flash-geheugen 256 MB 1,8 V 66 MHz parallelle NOR-flitser
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Spansie / Cipres
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S29GL032N90TFI030 |
Flash geheugen 3V 32 Mb Float Gate twee adres 90s
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Cypress halfgeleider
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S29GL064N90TFI010 |
Flashgeheugen64mb 3V 90ns Parallel NOCH Flits
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Cypress halfgeleider
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IS42S16320B-6TL |
DRAM 512M (32Mx16) 166MHz SDR SDRAM, 3.3V
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ISSI
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MT25QL01GBBB8E12-0SIT |
IC FLASH 1G SPI 133MHZ 24TPBGA
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Microntechnologie
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Mt25ql128aba1ese-MSIT |
IC FLASH 128M SPI 133MHZ 8SOP2
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Microntechnologie
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IS43TR16128AL-125KBL |
DRAM 2G 1,35V (128M x 16) DDR3 SDRAM
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ISSI
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K4B1G1646G-BCH9 |
1 GB D-die DDR3 SDRAM-specificatie
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Samsung halfgeleider
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K4G80325FB-HC25 |
Grafisch Geheugen
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Samsung halfgeleider
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M29DW128G70NF6E |
NOCH Flash Parallel 128Mbit 16 56/56
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STMicro-elektronica
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IS41LV16100C-50KLI-TR |
DRAM 16M, 3.3V, 50ns 1Mx16 EDO DRAM Async
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ISSI
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IS43TR16256AL-15HBLI |
DRAM 4G, 1,35V, 1333Mhz DDR3L SDAM
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ISSI
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S29CD016J0PQAM113 |
Flashgeheugen noch
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Cypress halfgeleider
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IS43TR16640A-125JBLI |
DRAM 1G, 1,5V, (64M x 16) 1600Mhz DDR3 SDRAM
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ISSI
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IS41C16100C-50KLI |
DRAM 16M, 5V, 50ns 1Mx16 EDO DRAM Async
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ISSI
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IS43TR16128B-15HBLI |
DRAM 2G, 1,5V, 1333MT/s 128Mx16 DDR3 SDRAM
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ISSI
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IS43TR16128B-125KBLI |
DRAM 2G, 1,5V, 1600MT/s 128Mx16 DDR3 SDRAM
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ISSI
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IS43TR16256A-125KBLI |
DRAM 4G, 1,5V, 1600Mhz DDR3 SDRAM
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ISSI
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IS43TR16256AL-125KBL |
DRAM 4G, 1,35 V, 1600 MHz DDR3L SDAM
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ISSI
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S29GL128N90FFAR22 |
Flashgeheugen noch
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Cypress halfgeleider
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- Ik ben niet bang. |
Flashgeheugen 8 GB NAND EEPROM
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Toshiba
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S29GL032N90FFIS30 |
Flashgeheugen32mb 3V 90ns Parallel NOCH Flits
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Cypress halfgeleider
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TC58BVG1S3HTAI0 |
EEPROM 3.3V, 2 Gbit CMOS en NAND EEPROM
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Toshiba
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THGBMHG7C1LBAIL |
Flash-geheugen 16 GB NAND EEPROM met CQ
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Toshiba
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S70FL256P0XMFI001 |
Flashgeheugen 256M, 3.0V, 104Mhz SPI NOCH Flits
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Cypress halfgeleider
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S25FL116K0XMFI041 |
Flashgeheugen 16M, 3V, 108Mhz-Serie NOCH Flits
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Cypress halfgeleider
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IS25LQ020B-JNLE-TR |
Flash geheugen 2 Mb QSPI, 8-pin SOP 150Mil, RoHS, ET, T&R
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ISSI
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Is25lq032b-JBLE |
Flashgeheugen 32M SPI, speld 8 SOPT 208mil ET 2.3-3.6V
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ISSI
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TC58NVG1S3HBAI4 |
EEPROM 3.3V, 2 Gbit CMOS en NAND EEPROM
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Toshiba
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TC58NVG2S0HBAI4 |
EEPROM 3.3V, 4 Gbit CMOS en NAND EEPROM
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Toshiba
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TC58BVG0S3HTAI0 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
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Toshiba
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S29JL032J70TFI220 |
De Parallel van de flashgeheugen32mb Flits 3.0V 70ns NOCH Flits
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Cypress halfgeleider
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S34MS04G100BHI000 |
Flash-geheugen 4G, 1,8 V, 45ns NAND-flash
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Spansie / Cipres
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S34ML01G200BHV000 |
Nand flashgeheugen
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Cypress halfgeleider
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S34MS01G100BHI000 |
Flashgeheugen 1G, 1.8V, 45ns NAND Flash
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Spansie / Cipres
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S29GL032N90TFI023 |
Flashgeheugen32mb 2.7-3.6V 90ns Parallel NOCH Flits
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Cypress halfgeleider
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Is25wp016d-jule-RT |
NOCH Flash 16Mb QSPI, 8-pins USON 2X3MM, RoHS, T&R
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ISSI
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TC58NVG1S3HTA00 |
EEPROM 3.3V, 2 Gbit CMOS en NAND EEPROM
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Toshiba
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TC58BVG1S3HTA00 |
EEPROM 3.3V, 2 Gbit CMOS en NAND EEPROM
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Toshiba
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TC58NVG0S3HTA00 |
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
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Toshiba
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TC58BVG2S0HTAI0 |
EEPROM 3.3V, 4 Gbit CMOS en NAND EEPROM
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Toshiba
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IS43TR16256A-125KBLI-TR |
DRAM 4G, 1,5V, 1600Mhz DDR3
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ISSI
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IS43TR16256A-107MBLI |
DRAM 4G, 1,5 V, 1866MHz 256Mx16 DDR3 SDRAM
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ISSI
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IS43TR16128CL-125KBL |
DRAM 2G 128Mx16 1600MT/s DDR3L 1.35V
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ISSI
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IS43TR16128B-15HBL |
DRAM 2G, 1,5V, 1333MT/s 128Mx16 DDR3 SDRAM
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ISSI
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IS43TR16512AL-125KBL |
DRAM DDR3L,8G,1.5V,RoHs 1600MT/s,512Mx16
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ISSI
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IS43DR16128B-25EBLI |
DRAM 2G, 1.8V, DDR2, 128Mx16, 400Mhz @ CL6, 84 bal BGA (10.5mmx13.5mm) RoHS, IT
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ISSI
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IS43TR16256AL-125KBLI |
DRAM 4G, 1,35 V, 1600 MHz DDR3L SDAM
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ISSI
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