FQB33N10LTM
fabrikant:
ONSEMI
Beschrijving:
MOSFET N-CH 100V 33A D2PAK
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Pakket / doos:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 5 V
Rds On (Max) @ Id, Vgs:
52mOhm @ 16.5A, 10V
FET Type:
N-Channel
Inrichtingsspanning (Max Rds On, Min Rds On):
5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain naar bronspanning (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1630 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK (TO-263)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Power Dissipation (Max):
3.75W (Ta), 127W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQB33N10
Inleiding
N-kanaal 100 V 33A (Tc) 3.75W (Ta), 127W (Tc) Oppervlakte D2PAK (TO-263)
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