FDMS8050
Specificaties
Categorie:
Discrete halfgeleiderproducten
Transistors
FET's, MOSFET's
Eénvoudige FET's, MOSFET's
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 750µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
285 nC @ 10 V
Rds On (Max) @ Id, Vgs:
0.65mOhm @ 55A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
22610 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Power Dissipation (Max):
156W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS80
Inleiding
N-kanaal 30 V 55A (Tc) 156W (Tc) Oppervlakte-montage 8-PQFN (5x6)
Verzend RFQ
Voorraad:
MOQ: