FQA8N100C
fabrikant:
ONSEMI
Beschrijving:
MOSFET N-CH 1000V 8A TO3PN
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Eigenschap:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Werktemperatuur:
-55 °C ~ 150 °C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Doorgangsplicht (Qg) (Max) @ Vgs:
nC 70 @ 10 V
Rds On (Max) @ Id, Vgs:
1.45Ohm @ 4A, 10V
FET-type:
N-kanaal
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3220 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-3PN
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
225W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQA8
Inleiding
N-kanaal 1000 V 8A (Tc) 225W (Tc) door gat TO-3PN
Verzend RFQ
Voorraad:
MOQ: