FDB2614
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
99 nC @ 10 V
Rds On (Max) @ Id, Vgs:
27mOhm @ 31A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7230 pF @ 25 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
D²PAK (TO-263)
Mfr:
ONSEMI
Current - Continuous Drain (Id) @ 25°C:
62A (Tc)
(Maximum) machtsdissipatie:
260 W (Tc)
Technology:
MOSFET (Metal Oxide)
Basisproductnummer:
FDB261
Inleiding
N-kanaal 200 V 62A (Tc) 260W (Tc) Oppervlakte D2PAK (TO-263)
Verzend RFQ
Voorraad:
MOQ: