FQP6N80C
fabrikant:
ONSEMI
Beschrijving:
MOSFET N-CH 800V 5.5A TO220-3
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 2.75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Pakket:
Buis
Drain to Source Voltage (Vdss):
800 V
Vgs (max):
±30V
Product Status:
Active
Invoercapaciteit (Ciss) (Max) @ Vds:
1310 pF @ 25 V
Mounting Type:
Through Hole
Reeks:
QFET®
Supplier Device Package:
TO-220-3
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Power Dissipation (Max):
158W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQP6
Inleiding
N-kanaal 800 V 5.5A (Tc) 158W (Tc) door gat TO-220-3
Verzend RFQ
Voorraad:
MOQ: