FDA59N25
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
82 nC @ 10 V
Rds On (Max) @ Id, Vgs:
49mOhm @ 29.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4020 pF @ 25 V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-3PN
Mfr:
ONSEMI
Current - Continuous Drain (Id) @ 25°C:
59A (Tc)
(Maximum) machtsdissipatie:
392W (Tc)
Technology:
MOSFET (Metal Oxide)
Basisproductnummer:
FDA59
Inleiding
N-kanaal 250 V 59A (Tc) 392W (Tc) door gat TO-3PN
Verzend RFQ
Voorraad:
MOQ: