NP100P06PDG-E1-AY
fabrikant:
Renesas Electronics America Inc.
Beschrijving:
MOSFET P-CH 60V 100A TO263
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
300 nC @ 10 V
Rds On (Max) @ Id, Vgs:
6mOhm @ 50A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
15000 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263
Mfr:
Renesas Electronics America Inc.
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
(Maximum) machtsdissipatie:
1.8W (Ta), 200W (Tc)
Technology:
MOSFET (Metal Oxide)
Basisproductnummer:
NP100P06
Inleiding
P-kanaal 60 V 100 A (Tc) 1,8 W (Ta), 200 W (Tc) Oppervlakte TO-263
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