FDB045AN08A0
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
138 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
75 V
Vgs (max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6600 pF @ 25 V
Montage-type:
Oppervlakte
Series:
PowerTrench®
Verpakking van de leverancier:
D²PAK (TO-263)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 90A (Tc)
Power Dissipation (Max):
310W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB045
Inleiding
N-kanaal 75 V 19A (Ta), 90A (Tc) 310W (Tc) Oppervlakte D2PAK (TO-263)
Verzend RFQ
Voorraad:
MOQ: