RFP50N06
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Eigenschap:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Werktemperatuur:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Doorgangsplicht (Qg) (Max) @ Vgs:
150 nC @ 20 V
Rds On (Max) @ Id, Vgs:
22mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2020 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Power Dissipation (Max):
131W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFP50
Inleiding
N-kanaal 60 V 50 A (Tc) 131 W (Tc) door gat TO-220-3
Verzend RFQ
Voorraad:
MOQ: