FDD5N60NZTM
fabrikant:
ONSEMI
Beschrijving:
MOSFET N-CH 600V 4A DPAK
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UniFET-II™
Supplier Device Package:
TO-252AA
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Power Dissipation (Max):
83W (Tc)
Technology:
MOSFET (Metal Oxide)
Basisproductnummer:
FDD5N60
Inleiding
N-kanaal 600 V 4A (Tc) 83W (Tc) Oppervlakte TO-252AA
Verzend RFQ
Voorraad:
MOQ: