FQP7N80C
fabrikant:
ONSEMI
Beschrijving:
MOSFET N-CH 800V 6.6A TO220-3
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Categorie:
Discrete halfgeleiderproducten
Transistors
FET's, MOSFET's
Eénvoudige FET's, MOSFET's
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Pakket / doos:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.9Ohm @ 3.3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1680 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
6.6A (Tc)
Power Dissipation (Max):
167W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQP7
Inleiding
N-kanaal 800 V 6.6A (Tc) 167W (Tc) door gat TO-220-3
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