HUF75339P3
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 20 V
Rds On (Max) @ Id, Vgs:
12mOhm @ 75A, 10V
FET-type:
N-kanaal
Drive Voltage (Max Rds On, Min Rds On):
10V
Pakket:
Buis
Drain to Source Voltage (Vdss):
55 V
Vgs (max):
±20V
Product Status:
Active
Invoercapaciteit (Ciss) (Max) @ Vds:
2000 pF @ 25 V
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-220-3
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Power Dissipation (Max):
200W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
HUF75339
Inleiding
N-kanaal 55 V 75 A (Tc) 200 W (Tc) door gat TO-220-3
Verzend RFQ
Voorraad:
MOQ: