IRLB8314PBF
fabrikant:
Infineon-technologieën
Beschrijving:
MOSFET N-CH 30V 171A TO220-3
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 100µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Doorgangsplicht (Qg) (Max) @ Vgs:
60 nC @ 4,5 V
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 68A, 10V
FET-type:
N-kanaal
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Pakket:
Buis
Drain to Source Voltage (Vdss):
30 V
Vgs (max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5050 pF @ 15 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-220-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
171A (Tc)
Power Dissipation (Max):
125W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRLB8314
Inleiding
N-kanaal 30 V 171A (Tc) 125W (Tc) door gat TO-220-3
Verzend RFQ
Voorraad:
MOQ: