IRFB7440PBF
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.9V @ 100µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
135 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tube
Drain naar bronspanning (Vdss):
40 V
Vgs (Max):
±20V
Productstatus:
Actief
Input Capacitance (Ciss) (Max) @ Vds:
4730 pF @ 25 V
Montage-type:
Door het gat
Series:
HEXFET®, StrongIRFET™
Verpakking van de leverancier:
Aan-220AB
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
143W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFB7440
Inleiding
N-kanaal 40 V 120A (Tc) 143W (Tc) door gat TO-220AB
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