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SIR668ADP-T1-RE3

fabrikant:
Vishay Siliconix
Beschrijving:
MOSFET N-CH 100V 93.6A PPAK SO-8
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
81 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.8mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3750 pF @ 50 V
Montage-type:
Oppervlakte
Series:
TrenchFET® Gen IV
Verpakking van de leverancier:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Stroom - continue afvoer (Id) @ 25°C:
93.6A (Tc)
Power Dissipation (Max):
104W (Tc)
Technologie:
MOSFET (Metaaloxide)
Base Product Number:
SIR668
Inleiding
N-kanaal 100 V 93,6 A (Tc) 104 W (Tc) Oppervlakte PowerPAK® SO-8
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