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RS1E260ATTB1

fabrikant:
Rohm halfgeleider
Beschrijving:
MOSFET P-CH 30V 26A/80A 8HSOP
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
175 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3.1mOhm @ 26A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7850 pF @ 15 V
Mounting Type:
Surface Mount
Reeks:
-
Supplier Device Package:
8-HSOP
Mfr:
Rohm halfgeleider
Current - Continuous Drain (Id) @ 25°C:
26A (Ta), 80A (Tc)
(Maximum) machtsdissipatie:
3W (Ta)
Technology:
MOSFET (Metal Oxide)
Basisproductnummer:
RS1E
Inleiding
P-kanaal 30 V 26A (Ta), 80A (Tc) 3W (Ta) oppervlakte-montage 8-HSOP
Verzend RFQ
Voorraad:
MOQ: