Bericht versturen

SCT3120ALGC11

fabrikant:
Rohm halfgeleider
Beschrijving:
SICFET N-CH 650V 21A TO247N
Categorie:
Afzonderlijke Halfgeleiderproducten
Specificaties
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.6V @ 3.33mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 18 V
Rds On (Max) @ Id, Vgs:
156mOhm @ 6.7A, 18V
FET-type:
N-kanaal
Drive Voltage (Max Rds On, Min Rds On):
18V
Pakket:
Buis
Drain to Source Voltage (Vdss):
650 V
Vgs (max):
+22V, -4V
Product Status:
Active
Invoercapaciteit (Ciss) (Max) @ Vds:
460 pF @ 500 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247N
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Power Dissipation (Max):
103W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT3120
Inleiding
N-kanaal 650 V 21A (Tc) 103W (Tc) door gat TO-247N
Verzend RFQ
Voorraad:
MOQ: