SSM3J332R,LF
Specificaties
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Operating Temperature:
150°C (TJ)
Pakket / doos:
Dronkaard-23-3 vlakke Lood
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
42 mOhm @ 5A, 10V
FET Type:
P-Channel
Inrichtingsspanning (Max Rds On, Min Rds On):
1.8V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain naar bronspanning (Vdss):
30 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
560 pF @ 15 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
SOT-23F
Mfr:
Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J332
Inleiding
P-kanaal 30 V 6A (Ta) 1W (Ta) Oppervlaktebevestiging SOT-23F
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Verzend RFQ
Voorraad:
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